10月24日，由SEMI(國際半導體設備與材料協會)中國主辦，南昌高新區企業中微半導體設備公司承辦的化合物半導體制程設備及技術研討會在南昌舉行，南昌市發改委副主任鐘堅、南昌市科技局副局長黃端偉、高新區管委會副調研員楊磊出席會議。

作為業內專業性極強的學術會議，本次研討會邀請了國內半導體行業眾多知名企業家和專家學者，重點探討化合物半導體領域SiC器件、GaN功率電子、MicroLED顯示最新技術進展，以及核心制程設備對于新技術快速發展過程中所面臨的挑戰。北京世紀金光半導體有限公司有幸受邀首次參加研討會，并以“Next Generation SiC Power Device Design, Fabrication Technology and Trends”為題，與業內學者共同探討第三代半導體碳化硅技術的應用與發展。

近年來，隨著以碳化硅(SiC)、氮化鎵(GaN)為主的第三代化合物半導體新材料陸續應用在二極管、金屬氧化物場效應晶體管、高電子遷移率晶體管等器件上，新技術革命的序幕已經拉開，高成長性的應用市場雛形已經初現。作為全球性戰略材料的制高點，碳化硅功率器件因其耐高壓、低損耗、高效率等特性，在高溫、高頻、大功率、光電子以及抗輻射等方面具有巨大的應用潛力。除了民用領域外，在航天、軍工、核能等極端環境應用有著不可替代的優勢。

Abstract：Silicon Carbide (SiC) is an attractive material for power semiconductor devices due to its high thermal conductivity, high saturated drift velocity, and high breakdown electric field. SiC power devices, such as SiC SBDs, MOSFETs and JFETs, have been commercialized With a wide range of applications including power supplies, electric vehicles, industrial equipment, and electrical appliances. Pursuing lower cost, less conduction loss and higher performance, new device designs  are being hotly discussing and researching, including trench device, floating junction device , super junction device and trench super junction device. Especially for SiC SBD and MOSFET, trench structures are the main develop trends for the next generation design. Those new designs raise more requirements and challenges for the fabrication technology. CENGOL has developed several novel SBD and MOSFET designs, fabrication process and prototypes, promising to improve the process cost and device performance.

Key words: SiC; SBD; MOSFET;Trench Device;Fabrication Process